What is sputtering?

Typical film forming method of PVD (Physical Vapor Deposition).

A method in which high-energy argon ions are bombarded to targets of various materials such as precious metals in a high vacuum, and metal atoms which are struck by argon ions  are deposited.

 

We offer thin film by various sputtering as one method of consignment film forming.

Principle (DC sputtering)

  1. Set the sample (substrate) to which the film is to be applied and the raw material of the film (target) in the equipment.
  2. Vacuum the inside of the equipment, apply a voltage between the substrate and the target.
  3. Argon gas is put into equipment and ionized by making plasma.
  4. High-speed accelerated argon ions collide with the target.
  5. The particles of the target struck by the collided ions adhere to the substrate and become a film.

 

①
①
②、③
②、③

④
④
⑤
⑤

Here is the target list that we formed in the past.

About various sputters

DC sputtering

DC sputtering schematic diagram
DC sputtering schematic diagram

<Advantages>

  • The energy of the particles as the raw material of the film is large and the adhesion to the substrate is strong.
  • Film can be formed without changing the composition ratio of raw materials of alloy and compound.
  • Film forming of high melting point material which is difficult by vacuum deposition.
  • Deposition of reactive gas enables film formation of oxide and nitride.
  • By applying electric power to the substrate side, it is possible to clean the substrate (reverse sputtering).
  • The deposition rate is faster than other sputtering.

 

<Disadvantages>

  • Ions will deposit on the surface of the insulator target and discharge will not occur.
  • In order to get electric discharge, the degree of vacuum in the equipment is relatively low, and it is susceptible to the influence of gas.
  • The substrate is damaged by the plasma.
  • Anomalous discharge is likely to occur.

RF sputtering

DC sputtering schematic diagram
DC sputtering schematic diagram

<Advantages>

  • The energy of the particles as the raw material of the film is large and the adhesion to the substrate is strong.
  • Film can be formed without changing the composition ratio of raw materials of alloy and compound.
  • Film forming of high melting point material which is difficult by vacuum evaporation.
  • Introduction of reactive gas enables film forming of oxide and nitride.
  • By applying electric power to the substrate side, it is possible to clean the substrate (reverse sputtering).
  • Insulation film can be made.

 

 

<Disadvantages>

  • Film forming rate is slower than DC sputtering.

  • Since the power supply and the matching box are necessary, the equipment becomes expensive.

Ion beam sputtering

RF sputtering schematic diagram
RF sputtering schematic diagram

Unlike the above two methods, a film forming method without discharge.

 

Ions which are released from the ion gun bombard the target, and particles are ejected.

 

<Advantages>

  • It is not necessary to make plasma by discharge, so film forming in a high vacuum environment is possible. Consequently, impurities are less contaminated.
  • It is possible to set conditions that are not affected by the conductivity of the target.
  • Ultra thin film (10nm or less) can be formed.

 

<Disadvantages>

  • Film deposition rate is slower than DC and RF sputtering.
  • Since the mechanism becomes complicated, the equipment becomes expensive.

 

Application field of sputter deposition

・ CD/DVD  ・ Semiconductor  ・ Magnetic head

・ Liquid crystal related (transparent conductive film)

・ LED  ・ Photocatalyst  ・ Battery

 

・ Various MEMS

Here is the target list that we formed in the past

Contact us for contract film deposition